2019年第66回応用物理学会春季学術講演会

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13 半導体 » 13.9 化合物太陽電池

[10a-PB3-1~14] 13.9 化合物太陽電池

2019年3月10日(日) 09:30 〜 11:30 PB3 (武道場)

09:30 〜 11:30

[10a-PB3-3] Optical Properties of Cr doped CuGaS2 Thin Films

〇(M1)Myeongok Kim1、Nazmul Ahsan2、Hiroya Matsubayashi3、Zacharie Li Kao Jehl2、Kalainathan Sivaperuman4、Yoshitaka Okada2,3 (1.Grad. Arts and Sci. UTokyo、2.RCAST. UTokyo、3.Elec. Eng. UTokyo、4.VIT Univ.)

キーワード:Chalcopyrite, Intermediate band, RF magnetron sputtering deposition

CuGaS2 (CGS) has been researched for various applications, such as laser or artificial photosynthesis. For CGS has a wide band gap and CGS intermediate band solar cells (IBSCs) are expected to have a theoretical efficiency of 47%, this research investigated the optical properties of Cr doped CGS for its potential application in IBSCs. Photoluminescence (PL) and absorption spectra measurements were conducted on samples made by RF magnetron sputtering. For compositional analysis, energy dispersive X-ray spectrometry (EDX) was measured.
It is found from absorption spectra measurement that Cr doping causes red shift of band edge. This may be due to the formation of intermediate band. From PL measurement, peak intensity has increased by Cr doping. Increased intensity may attribute to reduction in defects due to Cr doping. Since current research has investigated PL in short wavelength region, future work will be conducted on longer wavelength region for intermediate band analysis.