Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 9:00 AM - 12:00 PM Z20

Kohei Sasaki(Novel Crystal Technology), Fujii Mami(NAIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

△ [9a-Z20-1] Solid-phase epitaxy of Ga₂O₃ thin films on MgAl₂O₄ substrates by excimer laser irradiation

〇Takumi Matsushima¹, Kazuki Watanabe¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.TOSHIMA Manu., 3.KISTEC)

9:15 AM - 9:30 AM

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

〇Katsuaki Kawara¹, Yuichi Oshima², Mitsuru Okigawa¹, Takashi Shinohe¹ (1.FLOSFIA, 2.NIMS)

9:30 AM - 9:45 AM

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(Al_xGa_1-x)₂O₃ alloy thin film on a spinel substrate grown by mist chemical vapor deposition

〇Ryuto Horie¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

9:45 AM - 10:00 AM

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO₃ Substrate via Mist CVD Method.

〇Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Yuta Arata¹, Yusuke Ito¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

10:00 AM - 10:15 AM

△ [9a-Z20-5] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (5)

〇(M1)Yohei Sato¹, Kosuke Nakata¹, Shuta Miyashita¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

10:30 AM - 10:45 AM

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors

〇(D)Doudou Liang^1,2, Binjie Chen³, Hai Jun Cho¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.USTB, 3.IST-Hokkaido Univ.)

10:45 AM - 11:00 AM

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

〇Riku Kobayashi^1,2, Nabatame Toshihide², Onaya Takashi^1,2,3, Ohi Akihiko², Ikeda Naoki², Nagata Takahiro², Tsukagoshi Kazuhito², Ogura Atsushi^1,4 (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC, 4.MREL)

11:00 AM - 11:15 AM

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al₂O₃ gate insulator

〇(M1)Shuya Kono¹, Marin Mori¹, Magari Yusaku^1,2, Furuta Mamoru^1,2 (1.Kochi Univ. of Tech., 2.Center for nanotech.)

11:15 AM - 11:30 AM

△ [9a-Z20-9] Evaluation of DUV Photoluminescence Lifetime in Rocksalt-structured MgZnO Films

〇Kanta Kudo¹, Kyohei Ishii², Mizuki Ono¹, Kentaro Kaneko², Tomohiro Yamaguchi¹, Kohei Shima³, Kazunobu Kojima³, Shizuo Fujita², Tohru Honda¹, Shigefusa Chichibu³, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Kyoto Univ., 3.IMRAM-Tohoku Univ.)

11:30 AM - 11:45 AM

△ [9a-Z20-10] Design of ZnO/ZnMgO MQW Microcavity for Quantum Entangled Photon Pair Generation

〇Taketo Yano¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

11:45 AM - 12:00 PM

▼ [9a-Z20-11] Leakage current reduction in ZnO nanoparticle based near UV-LEDs

〇(M1C)RAJ DEEP¹, Yuki Konishi¹, Islam Mohammad Shafiqul¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane Univ., 2.SNCC)

Session information

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [9a-Z20-1] Solid-phase epitaxy of Ga₂O₃ thin films on MgAl₂O₄ substrates by excimer laser irradiation

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(Al_xGa_1-x)₂O₃ alloy thin film on a spinel substrate grown by mist chemical vapor deposition

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO₃ Substrate via Mist CVD Method.

△ [9a-Z20-5] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (5)

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al₂O₃ gate insulator

△ [9a-Z20-9] Evaluation of DUV Photoluminescence Lifetime in Rocksalt-structured MgZnO Films

△ [9a-Z20-10] Design of ZnO/ZnMgO MQW Microcavity for Quantum Entangled Photon Pair Generation

▼ [9a-Z20-11] Leakage current reduction in ZnO nanoparticle based near UV-LEDs

Authenticate

Session information

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [9a-Z20-1] Solid-phase epitaxy of Ga2O3 thin films on MgAl2O4 substrates by excimer laser irradiation

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga2O3 films for the device fabrication

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(AlxGa1-x)2O3 alloy thin film on a spinel substrate grown by mist chemical vapor deposition

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO3 Substrate via Mist CVD Method.

△ [9a-Z20-5] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (5)

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO2 Thin Film Transistors

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In2O3 TFT under bias stress in air and N2

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al2O3 gate insulator

△ [9a-Z20-9] Evaluation of DUV Photoluminescence Lifetime in Rocksalt-structured MgZnO Films

△ [9a-Z20-10] Design of ZnO/ZnMgO MQW Microcavity for Quantum Entangled Photon Pair Generation

▼ [9a-Z20-11] Leakage current reduction in ZnO nanoparticle based near UV-LEDs

Authenticate

△ [9a-Z20-1] Solid-phase epitaxy of Ga₂O₃ thin films on MgAl₂O₄ substrates by excimer laser irradiation

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(Al_xGa_1-x)₂O₃ alloy thin film on a spinel substrate grown by mist chemical vapor deposition

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO₃ Substrate via Mist CVD Method.

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al₂O₃ gate insulator