Riku Kobayashi

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 9:00 AM - 12:00 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

〇Riku Kobayashi^1,2, Nabatame Toshihide², Onaya Takashi^1,2,3, Ohi Akihiko², Ikeda Naoki², Nagata Takahiro², Tsukagoshi Kazuhito², Ogura Atsushi^1,4 (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC, 4.MREL)