[11a-Z26-1~13] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [11a-Z26-9] Interfacial intermixing controls of Ge/Si core-shell nanowires using thermal annealing treatment

〇Wipakorn Jevasuwan¹、Xiaolong Zhang¹、Naoki Fukata¹ (1.NIMS)

キーワード：Nanowire, Core-shell, Chemical vapor deposition

The heterostructure Ge/Si NWs have been suggested as potential building blocks to realize future high-performance transistor applications. Many efforts have been done to optimize structures, selective doping, carrier concentrations, and interface properties to be able to use NWs for nanodevices. However, the formation of a sharp interface and good crystallinity have not yet been optimized to enhance hole carrier accumulation. In this study, the thermal annealing effects on i-Ge/p-Si core-shell NWs were investigated. The morphology, interface, and crystalline property were analyzed by controlling the annealing parameters.