2020年第81回応用物理学会秋季学術講演会

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3 光・フォトニクス » 3.14 光制御デバイス・光ファイバー

[8a-Z16-1~10] 3.14 光制御デバイス・光ファイバー

2020年9月8日(火) 09:15 〜 12:00 Z16

渡邉 俊夫(鹿児島大)

09:45 〜 10:00

[8a-Z16-3] Structural design of graphene-loaded silicon SW-MS BG modulator for higher ER

〇(DC)Siim Heinsalu1、Yuichi Isogai1、Yuichi Matsushima1、Hiroshi Ishikawa1、Katsuyuki Utaka1 (1.Waseda University)

キーワード:electro-optic modulator, graphene, SW-MS BG

Graphene has received extensive research attention for its optical, electrical and physical properties and adaptability with silicon photonic devices. Using it in a modulator useful effects are electro-, thermo- or magneto-optic effects. Among these effects electro-optic effect is the more desirable due to its low-voltage and high-speed operation. For TE mode consideration a slot waveguide (WG) was reported to be more effective by about twice than a rib waveguide from viewpoints of refractive index and absorption changes. Especially for efficient absorption modulation with a larger extinction ratio (ER), a Bragg grating (BG) waveguide is effective by using wavelength shift of a steep side-lobe peak. For higher modulation and better fabrication error tolerance higher slot count can be considered. In this work structural design of a silicon sub-wavelength multi-slot Bragg grating (SW-MS BG) with graphene on top is studied in terms of various parameters such as, silicon WG widths, duty ratios and period counts of the BG for higher ERs.