The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Toshiyuki Kaizu(Kobe Univ.), Jun Tatebayashi(Osaka Univ.), Ryo Nakao(NTT)

2:30 PM - 2:45 PM

[12p-D215-3] Interpretation of Substate-Misorientation-Dependent C Concentrations in GaN Based on a Step-edge Segregation Model

〇Kazuhiro Mochizuki1, Fumimasa Horikiri2, Hiroshi Ohta1, Tomoyoshi Mishima1 (1.Hosei Univ., 2.SCIOCS)

Keywords:semiconductor, impurity, segregation