Kazuhiro Mochizuki

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Speaker, Author, Co-Author

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:30 PM - 2:45 PM

[12p-D215-3] Interpretation of Substate-Misorientation-Dependent C Concentrations in GaN Based on a Step-edge Segregation Model

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)