Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Toshiyuki Kaizu(Kobe Univ.), Jun Tatebayashi(Osaka Univ.), Ryo Nakao(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:00 PM - 2:15 PM

[12p-D215-1] [Young Scientist Presentation Award Speech] In-situ Observation of Anisotropic Lattice Relaxation Processes of GaAsSb/GaAs(001) Using Synchrotron X-ray

〇Koshiro Kubo¹, Syota Nogawa¹, Masahiro Kawano¹, Takuo Sasaki², Masamitu Takahashi², Hidetoshi Suzuki¹ (1.Miyazaki Univ., 2.QST)

2:15 PM - 2:30 PM

△ [12p-D215-2] In-situ X-ray diffraction study of two-step GaAs growth on Si

〇Kizuku Kawaguchi¹, Yu-Cian Wang¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Takuo Sasaki² (1.Toyota Technological Institute, 2.QST)

2:30 PM - 2:45 PM

[12p-D215-3] Interpretation of Substate-Misorientation-Dependent C Concentrations in GaN Based on a Step-edge Segregation Model

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

3:00 PM - 3:15 PM

[12p-D215-4] Solid-Phase Crystallization of Amorphous GaAs Thin Film on Glass

〇Masaya Saito¹, Takeshi Nishida¹, Kenta Moto¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Tsukuba Univ.)

3:15 PM - 3:30 PM

△ [12p-D215-5] Demonstration of high photoresponsivity in pseudo-single-crystal GaAs films on glass

〇Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

3:30 PM - 3:45 PM

[12p-D215-6] Self-Formation of InAs Quantum Dots on Glass Substrates by Molecular Beam Deposition

〇(M2)Yuta Tanaka¹, Kazumu Sasaki¹, Koichi Yamaguchi¹ (1.Univ. Electro-Comm.)

3:45 PM - 4:00 PM

[12p-D215-7] Emission at 1.42 μm from InAs/GaAs Trilayer Quantum Dots

〇Wenbo Zhan¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Masahiro Kakuda¹, Satoshi Iwamoto^1,2,3, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, 3.RCAST, Univ. of Tokyo)

4:00 PM - 4:15 PM

[12p-D215-8] Improvement of laser characteristics by increasing volume density of InGaAs/GaAs quantum dots

〇Masahiro Kakuda¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo)

4:30 PM - 4:45 PM

[12p-D215-9] Broadband emission wavelength control of buried InAs QDs with the growth rate of a GaAs capping layer

〇Tao Wang¹, Naoki Okada¹, Jin Oshima¹, Nobuhiko Ozaki¹, Naoki Ikeda², Yoshimasa Sugimoto² (1.Wakayama Univ, 2.NIMS)

4:45 PM - 5:00 PM

[12p-D215-10] Sensitivity characteristics of infrared photodetector utilizing InAs quantum dots and an Al_0.3Ga_0.7As/GaAs heterointerface

〇Shigeo Asahi¹, Takahiko Murata¹, Stefano Sanguinetti², Takashi Kita¹ (1.Kobe Univ., 2.Univ. Milano-Bicocca)

5:00 PM - 5:15 PM

[12p-D215-11] Effects of exciton overlap on terahertz wave generation due to difference frequency mixing in GaAs/AlAs multiple quantum wells

〇Kanta Sakaue¹, Osamu Kojima¹, Takashi Kita¹, Richard Hogg² (1.Kobe Univ., 2.Univ. of Glasgow)

5:15 PM - 5:30 PM

[12p-D215-12] Wavelength and temperature dependence of propagation losses around 1 um in a periodically-inverted GaAs/AlGaAs waveguide

〇(D)SHUMIN WANG¹, Tomonori Matsushita^1,2, Takashi Kondo^1,2 (1.Fac. of Eng., Univ. of Tokyo, 2.RCAST, Univ. of Tokyo)

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