2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

7 ビーム応用 » 7.1 X線技術

[14a-B508-1~11] 7.1 X線技術

2020年3月14日(土) 09:00 〜 12:00 B508 (2-508)

豊田 光紀(東京工芸大)

11:15 〜 11:30

[14a-B508-9] Cleaning of Sn layer in hydrogen plasma induced by intense pulsed EUV radiation

Nozomi Tanaka1、Baojun Zhu1、Chang Liu1、Kyung Sik Kang2、Youngduk Suh2、Jeong-Gil Kim2、Ken Ozawa3、Takeshi Takagi3、Minoru Kubo3、Shinsuke Fujioka1 (1.ILE Osaka Univ.、2.Mechatronics R&D Center, Samsung Electronics Co. Ltd.、3.Samsung R&D Institute Japan)

キーワード:EUV source, Hydrogen plasma, Sn layer

It has been known that the excited states of hydrogen atoms, which are also called as “hydrogen radicals” play an important role for the cleaning of this Sn contamination layer on the multilayer mirrors in the EUV sources. We have developed a testbed consists with a Xe EUV source and a hydrogen gas cell to study the production process of the EUV induced radicals and cleaning effects. The detailed design of the experiments, characteristic of EUV radiation, and Sn layer sample preparation will be presented in the talk.