[14p-B508-1~8] 3.15 シリコンフォトニクス・集積フォトニクス

▲ [14p-B508-3] High-frequency Response of Si-SET: Experimental Verification

〇(D)Alka Singh¹、Tomoki Nishimura²、Hiroaki Satoh^2,3、Hiroshi Inokawa^1,2,3 (1.GSST, Shizuoka Univ.、2.GSIST, Shizuoka Univ.、3.RIE, Shizuoka Univ.)

キーワード：Si- Single Electron Transistors, High-frequency, Rectifier

It has been observed that there is no upper limit of frequency in the rectifying operation od single-electron transistors (SETs). Theoretical explanation behind this is that the asymmetry in the tunneling rate with respect to drain voltage is responsible for asymmetry in the drain current, resulting in rectification even at higher frequency beyond the conventional cutoff frequency. Here, the details of ongoing experimental verification are reported.