09:30 〜 11:30
▲ [15a-PB1-1] Deposition Condition for High Crystalline Fraction of Yttria-Stabilized Zirconia (YSZ) Films Deposited by Reactive Sputtering at Room Temperature
キーワード：Reactive Sputtering, YSZ, low temperature
Our research group has reported that yttria-stabilized zirconia (YSZ) film is quite effective to stimulate crystallization of amorphous silicon (a-Si) at low temperature. Also, a crystallized YSZ film can be deposited on a non-heat resistive Cellulose Nanopaper (CNP) without any damage using DC magnetron sputtering with Ar and O2, which indicates a high possibility to fabricate a poly-Si TFT on CNP [1]. In the previous meeting, we reported the pre-sputtering condition is very important to improve crystalline quality or fraction of the deposited YSZ film. In this meeting, we show that, one of the deposition conditions, pumping speed is also an important factor.