[12a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [12a-N304-3] Electronic state analysis of rectangular cross-sectional GeSn nanowires with various orientations and cross-sectional sizes

〇Mizuki Sato¹, Hajime Tanaka^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ.)

Keywords:nanowire, GeSn, band structures