13:15 〜 13:30
▼ [12p-N206-2] Effect of UV-irradiation Time on the Transfer Characteristics of All Solution-processed a-IZO Thin-Film Transistor
キーワード：solution-processed, thin-film transistor, UV-irradiation
Next-generation devices need a simple fabrication process and low-temperature fabrication. From these criteria, the solution-process approach is a promising method. A few studies focus on a-IZO TFT electrical performance improvement have been reported, but using a quick and simple way by varying UV-irradiation time still needs further investigation. This research aims to study the effect of UV-irradiation time on the transfer curve of a-IZO TFT.
Top-gate self-aligned structure a-IZO TFT was fabricated using all-solution process. Then UV-irradiation was performed at 115°C for 60, 90, and 120 min. After UV treatment, the exposed IZO layer transforms as gate, source, and drain, respectively. The UV-irradiation time combine with low-temperature heat enhance the transfer characteristics. This work has demonstrated that varying UV-irradiation time is a simple and promising method to improve a-IZO TFT performance at low-temperature process, which is useful for flexible substrate application.
Top-gate self-aligned structure a-IZO TFT was fabricated using all-solution process. Then UV-irradiation was performed at 115°C for 60, 90, and 120 min. After UV treatment, the exposed IZO layer transforms as gate, source, and drain, respectively. The UV-irradiation time combine with low-temperature heat enhance the transfer characteristics. This work has demonstrated that varying UV-irradiation time is a simple and promising method to improve a-IZO TFT performance at low-temperature process, which is useful for flexible substrate application.