The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

1:30 PM - 1:45 PM

△ [12p-N206-3] Crystal growth of high-quality rutile GeO2 thin film and its structural analysis

〇(M2)Hitoshi Takane1, Shingo Yagyu2, Takashi Shinohe2, Kentaro Kaneko1 (1.Kyoto Univ., 2.FLOSFIA Inc.)

Keywords:ultra-wide bandgap semiconductor, oxide semiconductor, germanium oxide

Rutile (r-)GeO2, has been expected as a novel material for next-generation power devices, However, growth of r-GeO2 is significantly difficult. In this study, we fabricated r-GeO2 thin films and analyzed the structure of them. After the optimization of the growth conditions by Thermogravimetry / Differential Thermal Analysis, we successfully fabricated high-quality r-GeO2 thin films at high growth rate by mist CVD. The fabricated films were analyzed by XRD, TEM.