Hitoshi Takane

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM

△ [12p-N206-3] Crystal growth of high-quality rutile GeO₂ thin film and its structural analysis

〇(M2)Hitoshi Takane¹, Shingo Yagyu², Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA Inc.)