The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

2:00 PM - 2:15 PM

△ [12p-N206-5] Optimization of oxygen annealing condition to control the carrier density of p-type oxide semiconductor α-SnWO4

〇(M2)Yuka Dobashi1, Naoto Kikuchi2, Makoto Minohara2, Akane Samizo1, Keishi Nishio1 (1.Tokyo Univ. Sci., 2.AIST)

Keywords:p-type semiconductor, oxide