[12p-N406-1~12] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

[12p-N406-12] Predominant incorporation of Bi atoms on (111)B rather than on (111)A with a stack-fault interface in InP_1-xBi_x nanowires

〇章 国強^1,2、舘野 功太^1,2、小栗 克弥¹、後藤 秀樹¹ (1.NTT物性研、2.NTTナノフォトセンタ)

キーワード：半導体、ナノワイヤ、ヘテロ界面

Diluted Bismuth-contained III-V compound semiconductors are attracting much more interests due to its potential applications in spintronic and optoelectronic devices. The formation of their heterostructures with abrupt interfaces still remains challenging. Furthermore, it is essential to enhance the understanding about Bi-atom behaviour in heterostructure formation. Here we report growth and characterization of <112>-oriented InP_1-xBi_x nanowires grown by self-catalyzed vapor-liquid-solid (VLS) mode. We have clarified predominant incorporation of Bi atoms on (111)B rather than on (111)A. Such polarity-dependent incorporation behavior of Bi atoms leads to heterostructure formation with stacking-fault interfaces in InP_1-xBi_x nanowires.