Guoqiang Zhang

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

4:00 PM - 4:15 PM

[12p-N406-12] Predominant incorporation of Bi atoms on (111)B rather than on (111)A with a stack-fault interface in InP_1-xBi_x nanowires

〇Guoqiang Zhang^1,2, Kouta Tateno^1,2, Katsuya Oguri¹, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)