11:45 〜 12:00
▼ [13a-N302-9] Directed Self-Assembly Technology via Dual Surface Architectonics for Ultrahigh-Resolution Additively Manufactured Electronics
キーワード：additively manufactured electronics, directed self-assembly, organic thin-flm transistors
Directed self-assembly of metal nanoparticles appears to be the promising alternative to photolithography due to its high compatibility with soft electronics and simple fabrication process. As such, the technology of directed self-assembly has been gathering increasing attention in the field of next-generation additively manufactured electronics (AMEs).
Herein, we propose a dual-surface-architectonics (DSA) strategy as the novel fabrication technology for the directed self-assembly of submicron-scale soft electronics. The DSA includes two-step processes including local-area surface activation via selective parallel vacuum ultraviolet (PVUV) irradiation and subsequently chemical polarization by alkali treatment, which effectively improves not only the surface free energy (γs) in the local area on the substrate but also the surface adhesion force (FA). Comparing to the conventional method which only focuses on the γs difference, the surface after DSA process generates a large attraction force to pin the functional ink, resulting in successful patterning of self-assembled gold nanoparticle (AuNP) electrodes with unprecedently high resolution (600 nm in width). The DSA process further enables the layer-by-layer fabrication of high-resolution organic thin-film transistors (OTFTs) with a short channel width of 1 μm. These results indicate that the DSA strategy breaks the bottleneck of the directed self-assembly technology as well as provides a versatile platform for fabricating AMEs.
Herein, we propose a dual-surface-architectonics (DSA) strategy as the novel fabrication technology for the directed self-assembly of submicron-scale soft electronics. The DSA includes two-step processes including local-area surface activation via selective parallel vacuum ultraviolet (PVUV) irradiation and subsequently chemical polarization by alkali treatment, which effectively improves not only the surface free energy (γs) in the local area on the substrate but also the surface adhesion force (FA). Comparing to the conventional method which only focuses on the γs difference, the surface after DSA process generates a large attraction force to pin the functional ink, resulting in successful patterning of self-assembled gold nanoparticle (AuNP) electrodes with unprecedently high resolution (600 nm in width). The DSA process further enables the layer-by-layer fabrication of high-resolution organic thin-film transistors (OTFTs) with a short channel width of 1 μm. These results indicate that the DSA strategy breaks the bottleneck of the directed self-assembly technology as well as provides a versatile platform for fabricating AMEs.