[13a-N307-1~11] 17.3 層状物質

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

〇(D)YihRen Chang¹、Tomonori Nishimura¹、Kosuke Nagashio¹ (1.UTokyo)

キーワード：2D materials, oxidation

Thermodynamics approach is a simple but extremely useful method to inspect reaction tendency systematically, which has successfully proposed HfO₂ and ZrO₂ in the selection of high-k gate dielectric materials for Si-based devices. As candidate materials for next generation transistors, the stability of 2D materials is a critical issue that should be solved. In this research, thermodynamics approach was applied not only to verify the oxidation tendency of 2D materials but to predict the candidate materials that can solve oxidation issue by ameliorating the surface oxide.