Demonstration of High Gain WSe2 CMOS Inverter operating at Vdd of 0.5 V

Takamasa Kawanago; Takahiro Matsuzaki; Ryosuke Kajikawa; Iriya Muneta; Takuya Hoshii; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[13a-N307-1~11] 17.3 Layered materials

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N307 (Oral)

Toshifumi Irisawa(AIST)

11:15 AM - 11:30 AM

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

〇Takamasa Kawanago¹, Takahiro Matsuzaki², Ryosuke Kajikawa², Iriya Muneta², Takuya Hoshii², Kuniyuki Kakushima², Kazuo Tsutsui¹, Hitoshi Wakabayashi² (1.Tokyo Tech FIRST, 2.Tokyo Tech)

Keywords:WSe2, FET, CMOS Inverter

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Presentation information

[13a-N307-1~11] 17.3 Layered materials

[13a-N307-9] Demonstration of High Gain WSe2 CMOS Inverter operating at Vdd of 0.5 V

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V