5:15 PM - 5:30 PM
[16p-Z26-15] Physical properties of mist CVD-derived HZO films dependent on post deposition annealing by RTA
Keywords:hafnium zirconium oxide, mist CVD, ferroelectric
Recently we have shown that mist CVD-derived HZO are basically applicable as a ferroelectric analog memory device such as synaptic device. However, the used HZO films were all as-deposited and not annealed, therefore it is necessary to investigate and improve their crystalline properties.
In this work, rapid thermal annealing (RTA) as post deposition annealing (PDA) was newly examined on the mist CVD-derived HZO films with about 20 nm thickness. The mist CVD was performed under ambient pressure, wherein the source liquid evaporated near the substrate during the deposition process. This situation is different from general vacuum growth process such as ALD, indicating some difference would exist in the crystallized film properties between the mist-CVD and the other vacuum process.
In conclusion, we found that the mist CVD-derived HZO film with PDA showed clear crystalline peak corresponding to orthorhombic ferroelectric phase, compared to the CVD-derived pure HfO2 film. This might be related to the different surface morphology due to the mist CVD process, although the crystalline relation between the HZO and HfO2 would be similar to those in ALD-derived HZO.
In this work, rapid thermal annealing (RTA) as post deposition annealing (PDA) was newly examined on the mist CVD-derived HZO films with about 20 nm thickness. The mist CVD was performed under ambient pressure, wherein the source liquid evaporated near the substrate during the deposition process. This situation is different from general vacuum growth process such as ALD, indicating some difference would exist in the crystallized film properties between the mist-CVD and the other vacuum process.
In conclusion, we found that the mist CVD-derived HZO film with PDA showed clear crystalline peak corresponding to orthorhombic ferroelectric phase, compared to the CVD-derived pure HfO2 film. This might be related to the different surface morphology due to the mist CVD process, although the crystalline relation between the HZO and HfO2 would be similar to those in ALD-derived HZO.