The 68th JSAP Spring Meeting 2021

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

3:30 PM - 3:45 PM

△ [18p-Z05-8] Differnce between 4H-SiC/SiO2 nitrided interface structural changes by high temperature annealing and γ-ray irradiation

〇(M2)Yusuke Samata1, Masahiro Masunaga2, Akio Shima2, Ryo Kuwana2, Koji Kita1 (1.The Univ. of Tokyo, 2.Hitachi, Ltd.)

Keywords:nitridation, gamma ray, XPS

In this study, we focused on stability of 4H-SiC/SiO2 nitrided interface.
Differnce between the structural changes by high temperature annealing and γ-ray irradiation was investigated.