Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[18p-Z05-1] Theoretical calculation of a switching threshold voltage in a SiC complementary JFET logic gate operating at high temperature

〇Mitsuaki Kaneko¹, Masashi Nakajima¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effect
measurements of sulfur-implanted n-type SiC

〇(B)Taiga Matsuoka¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Koyanagi Tatsuki¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Science and Engineering,Hiroshima Univ.)

2:15 PM - 2:30 PM

[18p-Z05-4] [Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO₂ interface by
H₂ etching prior to SiO₂ deposition and interface nitridation

〇Keita Tachiki¹, Mitsuaki Kaneko¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

△ [18p-Z05-5] Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

〇Kyota Mikami¹, Koji Ito¹, Keita Tachiki¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:45 PM - 3:00 PM

△ [18p-Z05-6] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment

〇(D)Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

3:15 PM - 3:30 PM

△ [18p-Z05-7] XPS study of SiO₂/4H-SiC(112(_)0) interface with NO-POA

〇Takato Nakanuma¹, Takuji Hosoi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

3:30 PM - 3:45 PM

△ [18p-Z05-8] Differnce between 4H-SiC/SiO₂ nitrided interface structural changes by high temperature annealing and γ-ray irradiation

〇(M2)Yusuke Samata¹, Masahiro Masunaga², Akio Shima², Ryo Kuwana², Koji Kita¹ (1.The Univ. of Tokyo, 2.Hitachi, Ltd.)

3:45 PM - 4:00 PM

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

〇(D)Taehyeon Kil¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

4:00 PM - 4:15 PM

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

〇(M1)Rimpei Hasegawa¹, Kouji Kita¹ (1.Tokyo Univ.)

4:15 PM - 4:30 PM

△ [18p-Z05-11] Analysis of 3 level charge pumping characteristics in SiC MOSFETs considering carrier trapping and emission processes at interface traps

〇Yuta Matsuya¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO₂/SiC interface induced by high-temperature N₂ annealing

〇(M2)Yang Tianlin¹, Kita Koji¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N₂ + H₂annealing

〇Toshihiro Saga¹, Koji Kita¹ (1.The Univ. of Tokyo)

5:15 PM - 5:30 PM

[18p-Z05-14] Thermal Oxidation Rate of SiC Surface: O2 Pressure Dependence

〇Yuta Murono¹, Masayoshi Sato¹, Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

5:30 PM - 5:45 PM

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants

〇Tsunashi Shimizu¹, Toru Akiyama¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

5:45 PM - 6:00 PM

[18p-Z05-16] First-principles study on defect structure of SiC(000-1)/SiO₂ interface with wet oxidation

〇(M1)Mukai Tsunasaki¹, Yuki Mimbu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ.)

Session information

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1] Theoretical calculation of a switching threshold voltage in a SiC complementary JFET logic gate operating at high temperature

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effect
measurements of sulfur-implanted n-type SiC

[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)

[18p-Z05-4] [Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO₂ interface by
H₂ etching prior to SiO₂ deposition and interface nitridation

△ [18p-Z05-5] Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

△ [18p-Z05-6] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment

△ [18p-Z05-7] XPS study of SiO₂/4H-SiC(112(_)0) interface with NO-POA

△ [18p-Z05-8] Differnce between 4H-SiC/SiO₂ nitrided interface structural changes by high temperature annealing and γ-ray irradiation

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

△ [18p-Z05-11] Analysis of 3 level charge pumping characteristics in SiC MOSFETs considering carrier trapping and emission processes at interface traps

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO₂/SiC interface induced by high-temperature N₂ annealing

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N₂ + H₂annealing

[18p-Z05-14] Thermal Oxidation Rate of SiC Surface: O2 Pressure Dependence

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants

[18p-Z05-16] First-principles study on defect structure of SiC(000-1)/SiO₂ interface with wet oxidation

Authenticate

Session information

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1] Theoretical calculation of a switching threshold voltage in a SiC complementary JFET logic gate operating at high temperature

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effectmeasurements of sulfur-implanted n-type SiC

[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)

[18p-Z05-4] [Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO2 interface byH2 etching prior to SiO2 deposition and interface nitridation

△ [18p-Z05-5] Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

△ [18p-Z05-6] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment

△ [18p-Z05-7] XPS study of SiO2/4H-SiC(112(_)0) interface with NO-POA

△ [18p-Z05-8] Differnce between 4H-SiC/SiO2 nitrided interface structural changes by high temperature annealing and γ-ray irradiation

▼ [18p-Z05-9] Positive VFB shift of 4H-SiC MOS capacitors induced by Al2O3/SiO2 interface dipole layer formation

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

△ [18p-Z05-11] Analysis of 3 level charge pumping characteristics in SiC MOSFETs considering carrier trapping and emission processes at interface traps

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO2/SiC interface induced by high-temperature N2 annealing

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N2 + H2 annealing

[18p-Z05-14] Thermal Oxidation Rate of SiC Surface: O2 Pressure Dependence

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO2 interface by the coexistence of dry and wet oxidants

[18p-Z05-16] First-principles study on defect structure of SiC(000-1)/SiO2 interface with wet oxidation

Authenticate

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effect
measurements of sulfur-implanted n-type SiC

[18p-Z05-4] [Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO₂ interface by
H₂ etching prior to SiO₂ deposition and interface nitridation

△ [18p-Z05-7] XPS study of SiO₂/4H-SiC(112(_)0) interface with NO-POA

△ [18p-Z05-8] Differnce between 4H-SiC/SiO₂ nitrided interface structural changes by high temperature annealing and γ-ray irradiation

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO₂/SiC interface induced by high-temperature N₂ annealing

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N₂ + H₂annealing

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants

[18p-Z05-16] First-principles study on defect structure of SiC(000-1)/SiO₂ interface with wet oxidation