[19a-Z27-1~9] 15.4 III-V-group nitride crystals

△ [19a-Z27-1] High temperature initial Growth of the AlN grown on low temperature AlN-Buffer layer

〇Reiya Aono¹, Shota Tsuda¹, Yuuya Ageta¹, Takumi Miyagawa¹, Hideki Hirayama^2,3, Yuusuke Takashima¹, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED, 3.RIKEN)

Keywords:MOVPE, AlN, Initial growth

The initial growth including low temperature buffer layer is important for realize low dislocation density AlN. In the case of GaN, the 2-dimensional growth core is formed when the rising temperature, the growth layer became flat despite thin layer. However, the growth temperature of AlN were high compared with that of GaN, it is difficult to obtain flat thin layer in case of AlN in previous study, because these growth temperatures were low. In this study, we grow the AlN at 1700℃ using jet engine imitation gas flow MOVPE.