[20a-C306-1~11] 15.6 IV族系化合物（SiC）

▼ [20a-C306-9] Analysis of Inclusion Defect Generation in SiC Solution Crystal Growth Method Using Phase-Field Model

〇(D)HUIQIN ZHOU¹、YUMA FUKAMI¹、YIFAN DANG¹、Shunta Harada^1,2、Miho Tagawa^1,2、Toru Ujihara^1,2 (1.Grad. School of Eng. Nagoya Univ.、2.IMaSS, Nagoya Univ.)

キーワード：silicon carbide, crystal growth, phase field

This research reproduced SiC cellular structure formation using phase-field. A weakly curved initial step was set to simulate the process of cellular structure caused by the initial curved. Then, the trend of cellular structure changes with step height, and mechanisms of cellular structure generation were analyzed. Finally, to suppress cellular structure the solution flow speed and direction in the TSSG growth process were optimized using the phase-field method.