[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-5] Investigation for growth of high quality β-Ga₂O₃ thin film by direct synthesis method

〇Kohei Takata¹, Katsushi Nishino¹ (1.Tokushima Univ.)

Keywords:thin film growth, gallium oxide

We have been growing β-Ga₂O₃ thin film by a simple and low-cost direct synthesis method. In previous β-Ga₂O₃ thin film growth by direct synthesis method, the growth was not uniform over the entire substrate, with dendritic crystals growing in the center of the substrate and thin films growing at the edge of the substrate. This was due to insufficient O₂ gas supply to the center of the substrate. After changing the setup, a uniform β-Ga₂O₃ thin film was obtained across the entire substrate. In addition, by examining the supply gas conditions during post-growth warming down, the growth of β-Ga₂O₃ at low temperatures was suppressed and the quality of the film was improved.