[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-9] Dependence of growth conditions on b-Ga₂O₃ crystal quality grown by OCCC method

〇Isao Takahashi^1,2, Kochurikhin Vladimir¹, Tomida Taketoshi¹, Yao Yongzhao³, Sato Koji³, Ishikawa Yukari³, Sugawara Takamasa², Shoji Yasuhiro¹, Kamada Kei^1,2, Kakimoto Koichi², Yoshikawa Akira^1,2 (1.C&A corp., 2.Tohoku Univ., 3.JFCC)

Keywords:Gallium Oxide, Crucible free growth technique, Crystal Defect

We developed Oxide Crystal growth from Cold Crucible (OCCC) method as a novel crucible free melt growth techniques and investigated the growth condition on the crystalline quality of β-Ga₂O₃ ingtos.