[20p-C206-1~8] 15.1 Bulk crystal growth

[20p-C206-8] Etching evaluation of 2-inch diameter ScAlMgO4 single crystal wafers.

〇Yuji Shiraishi¹, Toki Nanto¹, Hiroyuki andou¹, Tsuguo Fukuda¹, Takashi Fujii^2,1, Kotaro Ishiji³ (1.Fukuda Crystal Lab., 2.Ritsumeikan Univ., 3.Kyushu Synchrotron Light Research Center)

Keywords:ScAlMgO4, SAM, Single Crystal

ScAlMgO 4 (SAM) single crystals have been reported as crystals that can be reused multiple times by producing high-yield GaN free-standing substrates and repolishing naturally peeled SAM substrates after thin film growth. Crystal defects in the creation of SAM single crystals have been investigated and reported by optical evaluation and X-ray topography (XRT). By elucidating the relationship between subgrain, crystal cores, striations, dislocation defects and growth conditions, we are moving toward dislocation and defect-free crystal growth. Wafers used for GaN epitaxial growth are evaluated by X-ray locking curve (XRC) and XRT, but this time evaluation was performed by a simple etching method.