[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-8] Effects of pore depth of Porous Si substrate on GaAs thin film growth

〇Ryunosuke Minamoto¹, Masahiro Kawano¹, Kosuke Fujioka¹, Hidetoshi Suzuki¹ (1.University of Miyazaki Faculty of Engineering)

Keywords:Porous Si