[21p-B203-1~20] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [21p-B203-13] Improved reliability of InGaZnO Thin Film Transistor
by Utilizing Low-temperature High-Pressure nitridation Treatment

〇(D)KuanJu Zhou¹、Keisuke Ide²、TingChang Chang¹ (1.National Sun Yat-Sen Univ、2.MSL Tokyo Tech)

キーワード：InGaZnO TFTs, Low-temperature High-Pressure nitridation Treatment (LHPN), Positive Bias Temperature Stress (PBTS)

In this work, we utilized novel low-temperature high-pressure nitridation (LHPN) treatment to effectively improve the electrical properties of top gate IGZO TFT. After LHPN, the on current of devices have a significant increase and improvement during PBTS. The quality of IGZO film can be effectively improved by LHPN due to the passivation of voids in IGZO films and process-induced defects in the side channel, and the residual hydrogen of GI will escape under LHPN.