The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

4:15 PM - 4:30 PM

[21p-B203-12] Modification of Electronic Structure and Defects of β-Ga2O3 Structure by Using (GaxIn1-x)2O3 solid solution system

〇(M1C)Hao Cheng1,2, Hoga Takeshi3, Ueda Shigenori2, Ogura Atsushi1,4, Chikyow Toyohiro2, Nagata Takahiro2,1 (1.Meiji Univ., 2.NIMS, 3.Tsuruoka Col., 4.MREL)

Keywords:Gallium Oxide, Indium Oxide, Modification of defects

Ga2O3 is expected for the next generation of wide-bandgap semiconductor materials as an exchange of GaN since it has an ultra-wide bandgap (4.8 eV), and the electric breakdown field is 8MV/cm. Also, Ga2O3 has a melting point in room pressure which means can be manufactured by the melt method. Although Ga2O3 is one of the Oxide semiconductors, the Oxygen Valance (Vo) are active as deep donors with large ionization energy. Therefore, Incorporated impurities are most used to modify electronic structure. On the other side, there are several reports about the strong binding energy of Ga2O3 cause the Ga atom is hard to replaced by dopant. In this research, we tried to find the concentration range of In in (GaxIn1-x)2O3 solid solution system, which can show a β-Ga2O3-based electronic structure, and the defects generated by In incorporation.