[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-12] Modification of Electronic Structure and Defects of β-Ga₂O₃ Structure by Using (Ga_xIn_1-x)₂O₃ solid solution system

〇(M1C)Hao Cheng^1,2, Hoga Takeshi³, Ueda Shigenori², Ogura Atsushi^1,4, Chikyow Toyohiro², Nagata Takahiro^2,1 (1.Meiji Univ., 2.NIMS, 3.Tsuruoka Col., 4.MREL)

Keywords:Gallium Oxide, Indium Oxide, Modification of defects

Ga₂O₃ is expected for the next generation of wide-bandgap semiconductor materials as an exchange of GaN since it has an ultra-wide bandgap (4.8 eV), and the electric breakdown field is 8MV/cm. Also, Ga₂O₃ has a melting point in room pressure which means can be manufactured by the melt method. Although Ga₂O₃ is one of the Oxide semiconductors, the Oxygen Valance (V_o) are active as deep donors with large ionization energy. Therefore, Incorporated impurities are most used to modify electronic structure. On the other side, there are several reports about the strong binding energy of Ga₂O₃ cause the Ga atom is hard to replaced by dopant. In this research, we tried to find the concentration range of In in (Ga_xIn_1-x)₂O₃ solid solution system, which can show a β-Ga₂O₃-based electronic structure, and the defects generated by In incorporation.