The 83rd JSAP Autumn Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

4:30 PM - 4:45 PM

▼ [21p-B203-13] Improved reliability of InGaZnO Thin Film Transistor
by Utilizing Low-temperature High-Pressure nitridation Treatment

〇(D)KuanJu Zhou1, Keisuke Ide2, TingChang Chang1 (1.National Sun Yat-Sen Univ, 2.MSL Tokyo Tech)

Keywords:InGaZnO TFTs, Low-temperature High-Pressure nitridation Treatment (LHPN), Positive Bias Temperature Stress (PBTS)

In this work, we utilized novel low-temperature high-pressure nitridation (LHPN) treatment to effectively improve the electrical properties of top gate IGZO TFT. After LHPN, the on current of devices have a significant increase and improvement during PBTS. The quality of IGZO film can be effectively improved by LHPN due to the passivation of voids in IGZO films and process-induced defects in the side channel, and the residual hydrogen of GI will escape under LHPN.