[22a-A404-3~8] CS.8 6.5 表面物理・真空、7.6 原子・分子線およびビーム関連新技術のコードシェア

▼ [22a-A404-5] Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (0001)

〇(DC)JINGMIIN TANG^1,2、Yusuke Hashimoto³、Tomohiro Matsushita^3,4、Yoshiyuki YAMASHITA^1,2 (1.National institute for materials science、2.Kyushu University、3.Nara Institute of Science and Technology、4.Japan Synchrotron Radiation Research Institute)

キーワード：Mg-doped GaN, Active site, Photoelectron holography

We employed Auger electron spectroscopy (AES), photoelectron spectroscopy (PES), and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From AES and PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state and the other is an inactive state. We employed PEH to investigate the two observed chemical states, finding that the active state could be attributed to an Mg atom substituting a Ga atom in the Mg-doped GaN structure. The inactive state, on the other hand, was considered to be a disordered structure and/or an amorphous structure in that structure.