10:30 〜 10:45
▼ [22a-E203-6] Characterization of single-crystalline carbon-doped h-BN/metal contact for current injection
キーワード：Hexagonal boron nitride, Current injection
Difficulty of current injection into a single-crystalline hexagonal boron nitride (h-BN) with band gap of 5.9 eV has long limited the realization of high-performance h-BN based electronic and optoelectronic devices. In the last meeting, we demonstrated the successful current injection into carbon-doped h-BN flakes. This time, we report the structural and chemical characterizations of the h-BN/metal contact to get an insight into what happened during the contact formation.
Here, we employed 4 techniques: Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), cathodoluminescence (CL) spectroscopy, and transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS), to characterize the contact and channel. On the basis of the observations, it is suggested that the plasma created N vacancies, which were then occupied by oxygen, forming a B2O3 amorphous layer. During post-metallization-annealing, the deposited metal reached and hybridized with the top-layer h-BN. These interactions could provide defect states in the gap, which allows the current injection into the single-crystalline h-BN.
Here, we employed 4 techniques: Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), cathodoluminescence (CL) spectroscopy, and transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS), to characterize the contact and channel. On the basis of the observations, it is suggested that the plasma created N vacancies, which were then occupied by oxygen, forming a B2O3 amorphous layer. During post-metallization-annealing, the deposited metal reached and hybridized with the top-layer h-BN. These interactions could provide defect states in the gap, which allows the current injection into the single-crystalline h-BN.