[15a-PA01-1~56] 17 ナノカーボン（ポスター）

▲ [15a-PA01-52] Reduction of I_d-V_g hysteresis in SiO₂/MoS₂ n-FET by insertion of h-BN interfacial layer

〇JIAQUAN FENG¹、TIANSHUN XIE¹、NOBUYOKI AOKI¹、MENGNAN KE¹ (1.chiba university)

キーワード：molybdenum disulfide, hexagonal boron nitride, hysteresis

In order to hande with the reliability issues of SiO₂/MoS₂ n-FET, we investigated 300-nm-thick SiO₂/(h-BN)/MoS₂ n-FETs. And we have found the impact of annealing process and inserting h-BN interfacial layer on hysteresis reduction in SiO₂/MoS₂ n-FETs.