[15p-E102-1~17] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [15p-E102-6] Metal–semiconductor transition of hydrogen-doped In₂O₃ via solid-phase crystallization.

〇XIAOQIAN WANG¹、Mamoru Furuta¹ (1.Kochi Univ. of Tech.)

キーワード：oxide semiconductor, indium oxide

We reported the metal-semiconductor transition (MST) of hydrogen-doped indium oxide (InO_x:H) films via low-temperature solid phase crystallization (SPC); however, the MST mechanism has not been clarified. In this presentation, the effect of oxygen and hydrogen during the deposition on the MST of SPC-InO_x:H films will be discussed.