[17p-PB07-1~15] 15.4 III-V-group nitride crystals

[17p-PB07-14] Investigation of Non-destructive and Non-contact Electrical Characterization of GaN on ScAlMgO₄ by THz-TDSE with Analytical Model using Characteristic Impedance

〇Hayato Watanabe¹, Dingding Wang¹, Yuya Kuroda¹, Naoki Goto¹, Takashi Fujii^1,3, Toshiyuki Iwamoto³, Momoko Deura², Tsutomu Araki¹ (1.Col. of Sci. & Eng, Ritsumeikan Univ., 2.R-GIRO, Ritsumeikan Univ., 3.PNP)

Keywords:GaN, THz-TDSE

We are aiming to fabricate GaN freestanding substrates utilizing ScAlMgO₄ (SAM) substrates by a combination of RF-MBE and HVPE methods. Among them, we have proposed terahertz time-domain spectroscopic ellipsometry (THz-TDSE) as a non-destructive and non-contact characterization method for RF-MBE-grown thin film templates of about 1 µm. In this study, we investigated the application of a model using characteristic impedance (CI model) in the analysis.