2023年日本表面真空学会学術講演会

講演情報

口頭発表

[1Da01-09] Surface Science(SS1) Physical Property

2023年10月31日(火) 09:30 〜 12:30 中会議室221 (2階)

Chair:高山 あかり(早稲田大学)、伊藤 貴司(岐阜大学)

11:15 〜 11:30

[1Da06] Electronic Structure and Conductivity Modifications of Rutile TiO2(100) by Hydrogen Ion Irradiation

*Muhammad Irfandi1, Takahiro Ozawa1, GyeongCheol Lim2, Mitsuhiko Maesato2, Katsuyuki Fukutani1,3 (1. Institute of Industrial Science, The University of Tokyo, 2. Division of Chemistry, Graduate School of Science, Kyoto University, 3. Advanced Science Research Center, Japan Atomic Energy Agency)

TiO2 has promising applications in solar conversion and hydrogen storage. Hydrogen doping is reported to reduce the TiO2 band gap to 1.54 eV. However, the interaction between hydrogen and TiO2 requires further investigations in the aspects of electrical conductivity and electronic properties. The experimental investigation was conducted by means of simultaneous in-situ electrical conductivity and x-ray/ultraviolet photoelectron spectroscopy (XPS/UPS) in the ultrahigh vacuum environment. We employed hydrogen ion irradiation to achieve a high doping concentration of hydrogen in TiO2(100). The results show that hydrogen ion irradiation at 295 K increases the TiO2 conductivity and increases the formation of Ti3+ chemical state. The donated electron from hydrogen to TiO2 induces an in-gap state (IGS) at 1 eV below Fermi level which acts as a small polaron center. In contrast, the hydrogen ion irradiation at 125 K decreases the TiO2 conductivity but increases the Ti3+ chemical state. The low-temperature irradiation induces an in-gap state at 1.3 eV below Fermi level, which is suggested to be a non-conducting state.

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