[1Ha01-04] Environmental Material/Energy Material (SU/EN)

[1Ha01(招待講演)] Clarifying issues in solar cells by band structure using HAXPES

*Tappei Nishihara^1,2, Atsushi Ogura^3,2 (1. JASRI, 2. Meiji Renewable Energy Institute, 3. Meiji University)

We investigate the potential of new materials for the carrier selective contact (CSC) layer. As a CSC layer, we focused on MoS₂, a two-dimensional layered material. The carrier selectivity of MoS_x for n-type Si substrates was evaluated by angle-resolved HAXPES measurements. As a result, we found that the band structure of the Si substrate is bent downward near the MoS_x/n-Si interface. This indicate that MoS_x has electron selectivity for n-Si substrate.