[1P01-52] Poster Presentation

[1P50] NH-related donor and acceptor defects in InGaAsN grown by Chemical Beam Epitaxy

*Takaya Tsukamoto¹, Hirotaka Tamashiro¹, Yoshio Ohshita¹, Nobuaki Kojima¹ (1. Semiconductor Laboratory, Toyota Technological Institute)

InGaAsN is lattice-matched to GaAs and is expected to be a material for sub-cells with a bandgap energy of 1 eV. We had studied the high-quality crystal growth of InGaAsN by Chemical Beam Epitaxy (CBE) method. In CBE, hydrogen derived from organic compound precursors forms NH complex defects and plays the role of acceptor and donor. In our previous study, we have reported that the high-density residual acceptor in p-type InGaAsN is attributed to NH defects. While, the residual donor had not yet been analyzed in detail. We measured the temperature dependence of the mobility of InGaAsN grown on GaAs(001) vicinal substrates by Hall effect measurements. Two samples with different off-cut directions of [110] (A-step) and [100] (AB-step), respectively, are compared. In both samples, it was found that nearly equal amounts of high-density acceptors and donors were incorporated. The results of defect characterization by the DLTS method will also be reported.