[2Hp01-09] Low-dimensional Material/Nanostructure/Nanomaterial (LD/NS/NM)

[2Hp06] Experimental investigation of the carrier properties of boron monosulfide

*Norinobu Watanabe¹, Keisuke Miyazaki², Masayuki Toyoda³, Kotaro Takeyasu^4,5, Naohito Tsujii⁶, Haruki Kusaka¹, Akiyasu Yamamoto⁷, Susumu Saito³, Masashi Miyakawa⁶, Takashi Taniguchi⁶, Takashi Aizawa⁶, Takao Mori⁶, Masahiro Miyauchi², Takahiro Kondo^4,5,8 (1. Graduate School of Pure and Applied Sciences, University of Tsukuba, 2. Department of Materials Science and Engineering, Tokyo Institute of Technology, 3. Department of Physics, Tokyo Institute of Technology, 4. Tsukuba Research Center for Energy Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba, 5. R&D Center for Zero Emission with Functional Materials, University of Tsukuba, 6. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 7. Institute of Engineering, Tokyo University of Agriculture and Technology, 8. Advanced Institute for Materials Research, Tohoku University)

Rhombohedral boron sulfide (r-BS) is a non-metallic layered material composed of boron and sulfur that has been shown by experiment and theoretical prediction to have a number of unique properties, including excellent performance as an OER catalyst when mixed with graphene. These properties make r-BS promising for applications. On the other hand, the basic properties of r-BS as a semiconductor have not yet been clarified. The purpose of this study is to synthesize r-BS and evaluate its carrier properties by measuring Seebeck coefficient and electrochemical measurements using photocurrent. Seebeck coefficient measurements showed that the Seebeck coefficient of r-BS is positive, and photoelectrochemical measurements using r-BS as an electrode showed r-BS have a p-type rectification profile. These measurements have experimentally shown that r-BS is a p-type semiconductor in which holes are the main carrier.