09:30 〜 09:55
[3Ia01] Dislocation annihilation in epitaxial silicene formed on diboride thin films
Two-dimensional (2D) materials formed epitaxially on single-crystal surfaces can have stress domains originating from the lattice mismatch between the lattices of 2D material and substrate surface. Epitaxial silicene sheet formed spontaneously on epitaxial ZrB2(0001) thin film grown on Si(111) substrate has a characteristic domain structure. The domain boundaries are part of continuous, buckled honeycomb lattice which contain partial dislocations. The transformation process of this stripe domains into a “single-domain” upon silicon atom adsorption was revealed in detail by in-situ real time STM observations at room temperature, providing insights into how crystallographic defects can be healed in 2D materials.
抄録パスワード認証
抄録の閲覧にはパスワードが必要です。パスワードを入力して認証してください。