[B-3] Group IV Materials I

2022年9月27日(火) 16:15 〜 18:00 102 (1F)

Session Chair: Taizoh Sadoh (Kyushu Univ.), Akira Heya (Univ. of Hyogo)

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16:15 〜 16:45

[B-3-01 (Invited)] Heteroepitaxy of Group IV Materials for Future Device Application

〇Yuji Yamamoto¹, Wei-Chen Wen¹, Bernd Tillack^1,2 (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

Presentation style: On-site (in-person)

16:45 〜 17:00

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

〇Wei-Chen Wen¹, Bernd Tillack^1,2, Yuji Yamamoto¹ (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

Presentation style: On-site (in-person)

17:00 〜 17:15

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

〇Koki Nozawa¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

Presentation style: Online

17:15 〜 17:30

[B-3-04] GeSn nanodots crystal nuclei for solid phase crystallization of poly-SiGeSn

〇Yusei Shirai¹, Hirokazu Tatsuoka¹, Yosuke Shimura^1,2,3 (1. Univ. of Shizuoka (Japan), 2. RIE Shizuoka Univ. (Japan), 3. imec (Belgium))

Presentation style: Online

17:30 〜 17:45

[B-3-05] Molecular beam epitaxy of Si₁_−xSn_x layers with 10%-Sn content on Si₁_−yGe_y buffers

〇Kazuaki Fujimoto¹ (1. Nagoya Univ. (Japan))

Presentation style: Online

17:45 〜 18:00

[B-3-06] Study on doping by ion implantation to Si_1−xSn_x epitaxial layers

〇Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1. Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

Presentation style: Online

セッション情報

[B-3] Group IV Materials I

[B-3-01 (Invited)] Heteroepitaxy of Group IV Materials for Future Device Application

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

[B-3-04] GeSn nanodots crystal nuclei for solid phase crystallization of poly-SiGeSn

[B-3-05] Molecular beam epitaxy of Si₁_−xSn_x layers with 10%-Sn content on Si₁_−yGe_y buffers

[B-3-06] Study on doping by ion implantation to Si_1−xSn_x epitaxial layers

認証

セッション情報

[B-3] Group IV Materials I

[B-3-01 (Invited)] Heteroepitaxy of Group IV Materials for Future Device Application

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

[B-3-04] GeSn nanodots crystal nuclei for solid phase crystallization of poly-SiGeSn

[B-3-05] Molecular beam epitaxy of Si1−xSnx layers with 10%-Sn content on Si1−yGey buffers

[B-3-06] Study on doping by ion implantation to Si1−xSnx epitaxial layers

認証

[B-3-05] Molecular beam epitaxy of Si₁_−xSn_x layers with 10%-Sn content on Si₁_−yGe_y buffers

[B-3-06] Study on doping by ion implantation to Si_1−xSn_x epitaxial layers