〇Kenta Moto^1,2, Kaoru Toko³, Tomonari Takayama¹, Toshifumi Imajo³, Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. JSPS Research Fellow (Japan), 3. Univ. of Tsukuba (Japan))

Presentation style: On-site (in-person)

15:30 〜 15:45

[E-2-06] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

Presentation style: Online

15:45 〜 16:00

[E-2-07 (Late News)] Real-Time and Atomic-Scale Observation of Local Solid-Phase Epitaxial Growth in Thin Silicon Film

〇Manabu Tezura¹, Takanori Asano¹, Riichiro Takaishi¹, Mitsuhiro Tomita¹, Masumi Saitoh¹, Hiroki Tanaka¹ (1. KIOXIA Corp. (Japan))

Presentation style: On-site (in-person)

セッション情報

[E-2] Advanced Group IV Thin Film Devices and Technologies

[E-2-01 (Invited)] In-situ observations of crystal growth behaviors of silicon during solidification

[E-2-02] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO₂ gate insulator with high pressure water annealing

[E-2-03] A Novel Scheme for Fabrication of T-Gate Polysilicon Thin Film Transistors with Lightly Doped Drain

[E-2-04] Implantation-Free Vertically Stacked GAA Poly-Si Nanosheet FETs
with Raised Source/Drain

[E-2-05] First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

[E-2-06] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing

[E-2-07 (Late News)] Real-Time and Atomic-Scale Observation of Local Solid-Phase Epitaxial Growth in Thin Silicon Film

認証

セッション情報

[E-2] Advanced Group IV Thin Film Devices and Technologies

[E-2-01 (Invited)] In-situ observations of crystal growth behaviors of silicon during solidification

[E-2-02] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO2 gate insulator with high pressure water annealing

[E-2-03] A Novel Scheme for Fabrication of T-Gate Polysilicon Thin Film Transistors with Lightly Doped Drain

[E-2-04] Implantation-Free Vertically Stacked GAA Poly-Si Nanosheet FETs with Raised Source/Drain

[E-2-05] First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

[E-2-06] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing

[E-2-07 (Late News)] Real-Time and Atomic-Scale Observation of Local Solid-Phase Epitaxial Growth in Thin Silicon Film

認証

[E-2-02] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO₂ gate insulator with high pressure water annealing

[E-2-04] Implantation-Free Vertically Stacked GAA Poly-Si Nanosheet FETs
with Raised Source/Drain