2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

05: Photonics: Devices / Integration / Related Technology

[A-2] New Materials and Platforms for Photonics

2022年9月27日(火) 14:00 〜 15:30 101 (1F)

Session Chair: Xuejun Xu (NTT Corp.), Ueli Koch (ETH Zurich)

14:45 〜 15:00

[A-2-03] Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode

〇Tipat - Piyapatarakul1, Hanzhi Tang1, Kasidit Toprasertpong1, Shinichi Takagi1, Mitsuru Takenaka1 (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-2-03

We numerically study the modulation properties of InGaAsP metal-oxide-semiconductor (MOS) optical modulator with graphene gate electrode operating at a 1.55 um wavelength. Using p-type doped graphene as a transparent gate electrode, we can fully utilize the electron-induced refractive index change in an n-type InGaAsP waveguide, enabling the phase modulation efficiency of 0.79 Vcm and 0.22 dB optical loss for pi phase shift when the gate oxide thickness is 100 nm. The high electron mobility in InGaAsP also enables the modulation bandwidth of greater than 100 GHz.

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