Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-2] Wide Bandgap Materials

2022年9月27日(火) 14:00 〜 15:45 102 (1F)

Session Chair: Shingo Ogawa (Toray Res. Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

14:00 〜 14:30

〇Mathias Rommel¹, Tobias Erlbacher¹ (1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany))

Presentation style: Online

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