2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

2022年9月29日(木) 16:00 〜 18:00 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

16:45 〜 17:00

[G-10-03] Investigation of access resistance components in Si-channel p-FinFET using cascaded devices.

〇Pierre Eyben1, Goutham Arutchelvan1, Thomas Chiarella1, Hiroaki Arimura1, Romain Ritzenthaler1, Jérome Mitard1, Eugenio Dentoni Litta 1, Naoto Horiguchi1, Ludovic Goux1 (1. Imec (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-03

Within this work, a new procedure is proposed to split and analyze the different access resistance compo-nents for Si-channel p-FinFET devices. This is realized combining a dedicated cascaded FET test-structure and advanced data filtering procedures. This is allowing us to identify the relative weight of contact, epi, interface and channel resistance components and hence to propose strategies to minimize the total access resistance such as the introduction of graded SiGe source-drain epi.

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