Atomic Layer Etching of Ti-Compounds: Mechanism and Etch Selectivity Control for Advanced Device Fabrication

Bablu Mukherjee

doi:https://doi.org/10.7567/SSDM.2022.G-10-06

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

2022年9月29日(木) 16:00 〜 18:00 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

17:30 〜 17:45

[G-10-06] Atomic Layer Etching of Ti-Compounds: Mechanism and Etch Selectivity Control for Advanced Device Fabrication

Bablu Mukherjee^1,2, René H.J. Vervuurt³, Airah Peraro Osonio², 〇Takayoshi Tsutsumi², Masaru Hori², Nobuyoshi Kobayashi² (1. ASM Japan K.K. (Japan), 2. Nagoya Univ. (Japan), 3. ASM Belgium (Belgium))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-10-06

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講演情報

[G-10] Advanced CMOS: Device, Process and Material

[G-10-06] Atomic Layer Etching of Ti-Compounds: Mechanism and Etch Selectivity Control for Advanced Device Fabrication

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