[G-5] Image Sensor Technology

[G-5-04] Flexible Integrated Circuits Developed by Layer Transfer Process of FDSOI MOSFETs

〇Masahide Goto¹, Shigeyuki Imura¹ (1. NHK Sci. & Tech. Res. Labs. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-5-04

We report flexible integrated circuits (ICs) via the layer transfer process of fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) onto a plastic substrate. Our device combines the high performance of single crystalline silicon (sc-Si) MOSFETs and the flexibility of plastic. A 6-μm thick FDSOI device with 50-nm thick MOSFET active layers and aluminum wires is successfully transferred to a plastic substrate. In addition to mechanical flexibility, operation of ICs including complementary metal-oxide semiconductor (CMOS) inverters and 101-stage ring oscillators is confirmed, indicating their potential in flexible highly integrated devices, such as image sensors and displays.